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| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION *Low Noise NF= 3.0dB TYP. @ f= 500MHz *High Power Gain Gpe= 15dB TYP. @ f= 500MHz *High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS *Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25 0.25 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2026 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 A hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain--Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; f= 500MHz 13 15 dB NF Noise Figure VCE= 10 V,IC= 3mA; f= 500MHz; RG= 50 3 4 dB isc Websitewww.iscsemi.cn 2 |
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